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Same model may have multiple batches, images only for reference.
IXFP36N60X3 Real Image
Same model may have multiple batches, images only for reference.

IXFP36N60X3

Part No IXFP36N60X3
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET ULTRA JCT 600V 36A TO220  /  N-Channel 600 V 36A (Tc) 446W (Tc) Through Hole TO-220
Datasheet
IXFP36N60X3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr IXYS
Series HiPerFET™, Ultra X3
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 25 V
Power Dissipation (Max) 446W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 238-IXFP36N60X3
Standard Package 50
Win Source Part Number 1118943-IXFP36N60X3
Ultra Librarian 3D Model Ultra Librarian IXFP36N60X3 CAD Model

Description

The IXFP36N60X3 is an N-Channel MOSFET transistor manufactured by IXYS.

  • Series: HiPerFET™, Ultra X3
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Power Dissipation (Max): 446W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
  • Temperature Range: -55°C to 150°C (TJ)
  • Mounting Type: Through-Hole
  • Package/Case: TO-220-3
  • Supplier Device Package: TO-220
  • ECCN: EAR99
  • REACH: Unaffected
  • HTSUS Code: 8541.29.0095
  • MSL Level: 1 (Unlimited)

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