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SPP80N06S2L-06

Part No SPP80N06S2L-06
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS Power-Transistor
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 180μA
Gate Charge (Qg) (Maximum) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5050pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 250W (Tc)
Rds On (Maximum) @ Id, Vgs 6.3 mOhm @ 69A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 1258135-SPP80N06S2L-06
Manufacturer Homepage www.infineon.com
Family Name SPP80N06S2L-06
Introduction Date May 16, 2001
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPP80N06S2L-06 CAD Model

Description

The Infineon Technologies SPP80N06S2L-06 is an obsolete (EOL) electronic component that belongs to the OptiMOS series.

  • Packaging: Tube
  • Mounting Style: Through Hole
  • Operating Temperature: -55°C and 175°C (TJ)
  • Package: TO-220-3
  • Technology: MOSFET
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Family: SPP80N06S2L-06
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 5050pF @ 25V
  • Power Dissipation (Maximum): 250W (Tc)
  • Rds On (Maximum) @ Id, Vgs: 6.3 mOhm @ 69A, 10V
  • Introduction Date: May 16, 2001
  • ECCN: EAR99
  • Country of Origin: Malaysia
  • Estimated EOL Date: Obsolete

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