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Same model may have multiple batches, images only for reference.
SPB80N06S2-07 Real Image
Same model may have multiple batches, images only for reference.

SPB80N06S2-07

Part No SPB80N06S2-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOS Power-Transistor
Datasheet
SPB80N06S2-07 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 180μA
Gate Charge (Qg) (Maximum) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4540pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 250W (Tc)
Rds On (Maximum) @ Id, Vgs 6.6 mOhm @ 68A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-3-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1257804-SPB80N06S2-07
Manufacturer Homepage www.infineon.com
Family Name SPB80N06S2-07
Introduction Date April 24, 2003
ECCN EAR99
Country of Origin Germany
Estimated EOL Date Obsolete
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SPB80N06S2-07 CAD Model

Description

The Infineon Technologies 1257804-SPB80N06S2-07 is a MOSFET transistor manufactured by Infineon Technologies.

  • Channel Type: N
  • Application: Discrete Semiconductor Products
  • Continuous Drain Current: 80A (Tc)
  • Maximum Power Dissipation: 250W (Tc)
  • Mounting: SMD
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supply and Demand Status: Balanced

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