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SGB15N120ATMA1

Part No SGB15N120ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 30A 198W TO263-3 / IGBT NPT 1200 V 30 A 198 W Surface Mount PG-TO263-3-2
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Infineon Technologies
Package Tape & Reel (TR)
Product Status Last Time Buy
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 30 A
Current - Collector Pulsed (Icm) 52 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 15A
Power - Max 198 W
Switching Energy 1.9mJ
Input Type Standard
Gate Charge 130 nC
Td (on/off) @ 25°C 18ns/580ns
Test Condition 800V, 15A, 33Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Base Product Number SGB15N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000012560,SGB15N120-ND,SGB15N120,SGB15N120ATMA1TR,INFINFSGB15N120ATMA1,2156-SGB15N120ATMA1
Standard Package 1,000
Win Source Part Number 997785-SGB15N120ATMA1
Ultra Librarian 3D Model Ultra Librarian SGB15N120ATMA1 CAD Model

Description

The SGB15N120ATMA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for various power applications.

  • IGBT Type: NPT
  • Voltage Collector Emitter Breakdown: 1200V
  • Maximum Collector Current: 30A
  • Maximum Power: 198W
  • Switching Energy: 1.9mJ
  • Gate Charge: 130nC
  • Switching Time: 18ns/580ns @ 25°C
  • Package: TO-263-3, D²Pak
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4478 $57.9120
100+ $1.1880 $118.8000
155+ $1.1508 $178.3740
210+ $1.1138 $233.8980
270+ $1.0766 $290.6820
360+ $0.9653 $347.5080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 258 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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