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Same model may have multiple batches, images only for reference.
IRLU3636-701TRP Infineon Technologies
Same model may have multiple batches, images only for reference.

IRLU3636-701TRP

Part No IRLU3636-701TRP
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 60V 50A IPAK
Datasheet
IRLU3636-701TRP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET?
Packaging Tube
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Rds On (Max) @ Id, Vgs 6.8 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100μA
Gate Charge (Qg) @ Vgs 49nC @ 4.5V
Input Capacitance (Ciss) @ Vds 3779pF @ 50V
Power - Max 143W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Device Package I-Pak
Win Source Part Number 205488-IRLU3636-701TRP
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRLU3636-701TRP CAD Model

Description

The Infineon Technologies IRLU3636-701TRP is a N-channel MOSFET transistor with a drain-source voltage of 60V and a continuous drain current of 50A @ 25°C.

  • Mounting Style: Through-hole
  • Package: TO-251-3 short leads, IPak, TO-251AA
  • Gate Type: Logic level gate
  • Maximum Gate-Source Threshold Voltage: 2.5V @ 100μA
  • Gate Charge: 49nC @ 4.5V
  • Input Capacitance: 3779pF @ 50V
  • Maximum Power Rating: 143W
  • Series: HEXFET
  • Market Demand: Medium

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