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Same model may have multiple batches, images only for reference.
IRLIB4343 Real Image
Same model may have multiple batches, images only for reference.

IRLIB4343

Part No IRLIB4343
Manufacturer Infineon Technologies
Catalog FETs - Single
Description DIGITAL AUDIO MOSFET | MOSFET N-CH 55V 19A TO220FP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 55V
Id - Continuous Drain Current 19A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 50mOhm at 4.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 42nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 740pF at 50V
Power Dissipation (Maximum) 39W
Temperature Range - Operating -40°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB Full-Pak
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1188557-IRLIB4343
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRLIB4343 CAD Model

Description

The 1188557-IRLIB4343 is an N-Channel MOSFET with a drain-source breakdown voltage of 55V and continuous drain current of 19A by Infineon Technologies.

  • Power Dissipation: 39W
  • Maximum Rds On: 50mOhm @ Id,Vgs of 4.7A, 10V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 42nC @ 10V
  • Maximum Input Capacitance: 740pF @ 50V
  • Package: TO-220AB Full-Pak package
  • Supply and demand status: Limited

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