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IRGP35B60PDPBF

Part No IRGP35B60PDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3+Tab) TO-247AC Tube / IGBT 600V 60A 308W TO247AC
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 60A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.55V @ 15V, 35A
Maximum Power Dissipation 308W
Total Switching Energy(Ets) 220μJ (on), 215μJ (off)
Input Type Standard
Gate Charge 160nC
Turn-on and Turn-off delay time 26ns/110ns
Testing Conditions 390V, 22A, 3.3 Ohm, 15V
Reverse Recovery Time (trr) 42ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 017741-IRGP35B60PDPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRGP35B60PD
Introduction Date June 02, 2004
ECCN EAR99
Country of Origin Mexico
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRGP35B60PDPBF CAD Model

Description

The Infineon Technologies 017741-IRGP35B60PDPBF is a through hole-mounted NPT IGBT transistor with a reverse recovery time of 42ns. This transistor is designed for standard input types and has a gate charge of 160nC.

  • Maximum Collector Current: 60A
  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Total Switching Energy (on): 220μJ
  • Total Switching Energy (off): 215μJ
  • Turn-on Delay Time: 26ns
  • Turn-off Delay Time: 110ns
  • Package: TO-247AC
  • Maximum Power Dissipation: 308W
  • Status: active
  • Popularity: high

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $41.5845 $83.1690
3+ $34.1206 $102.3618
5+ $33.0544 $165.2720
7+ $31.9881 $223.9167
9+ $30.9218 $278.2962
11+ $27.7230 $304.9530
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Availability: 4,600 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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