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IRG4PH30KDPBF

Part No IRG4PH30KDPBF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 20A 100W TO247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 20A
Pulsed Collector Current 40A
Collector-emitter saturation voltage(Max) 4.2V @ 15V, 10A
Maximum Power Dissipation 100W
Total Switching Energy(Ets) 950μJ (on), 1.15mJ (off)
Input Type Standard
Gate Charge 53nC
Turn-on and Turn-off delay time 39ns/220ns
Testing Conditions 800V, 10A, 23 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Win Source Part Number 143170-IRG4PH30KDPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRG4PH30KD
Introduction Date June 17, 2004
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date 2019
Ultra Librarian 3D Model Ultra Librarian IRG4PH30KDPBF CAD Model

Description

The Infineon Technologies 143170-IRG4PH30KDPBF is a through hole-mounted IGBT transistor with a reverse recovery time of 50ns.

  • Input Type: Standard
  • Gate Charge: 53nC
  • Maximum Collector Current: 20A
  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Total Switching Energy: 950μJ (on) and 1.15mJ (off)
  • Turn-On and Turn-Off Delay Times: 39ns and 220ns
  • Package: TO-247AC
  • Maximum Power Dissipation: 100W
  • Status: Active
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $23.2835 $69.8505
6+ $19.1045 $114.6270
9+ $18.5074 $166.5666
12+ $17.9104 $214.9248
15+ $17.3134 $259.7010
20+ $15.5224 $310.4480
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Availability: 26 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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