The Infineon Technologies HEXFET, StrongIRFET is a MOSFET technology-based electronic component that has a current rating of 42A (Ta), 100A (Tc) @ 25°C. It has a Drain Source Voltage of 30V and Gate Charge (Qg) (Maximum) @ Vgs of 120nC @ 10V. The device has a Channel Type Type of N and Rds On (Maximum) @ Id, Vgs of 1.3 mOhm @ 50A, 10V. The package is 8-PowerTDFN and is mounted using SMD technology. The device has an Input Capacitance (Ciss) (Maximum) @ Vds of 7200pF @ 15V and Vgs(th) (Maximum) @ Id of 2.35V @ 150μA. The Infineon Technologies HEXFET, StrongIRFET has a Power Dissipation (Maximum) of 3.6W (Ta), 156W (Tc) and a Vgs (Maximum) of ±20V. It is suitable for use in Discrete Semiconductor Products and has an estimated EOL Date of 2026. The device is manufactured in Malaysia and has a medium level of popularity with a limited supply and demand status.

• Current Rating: 42A (Ta), 100A (Tc) @ 25°C
• Drain Source Voltage: 30V
• Gate Charge (Qg) (Maximum) @ Vgs: 120nC @ 10V
• Channel Type: N
• Rds On (Maximum) @ Id, Vgs: 1.3 mOhm @ 50A, 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 7200pF @ 15V
• Vgs(th) (Maximum) @ Id: 2.35V @ 150μA
• Power Dissipation (Maximum): 3.6W (Ta), 156W (Tc)
• Vgs (Maximum): ±20V