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Same model may have multiple batches, images only for reference.
IRFH5255TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH5255TRPBF

Part No IRFH5255TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 15A 8VQFN
Datasheet
IRFH5255TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 15A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 14.5nC @ 10V
Max Input Capacitance 988pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 26W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6) Single Die
Dimension 8-VQFN
Win Source Part Number 205358-IRFH5255TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH5255TRPBF CAD Model

Description

The Infineon Technologies IRFH5255TRPBF MOSFET is a high-performance N-channel transistor that is ideal for use in a wide range of electronic applications.

  • Maximum Power Dissipation: 3.6W (Ta), 26W (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Maximum Continuous Drain Current: 15A (Ta), 51A (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 14.5nC @ 10V
  • Package: PQFN (5x6) Single Die
  • Maximum Input Capacitance: 988pF @ 13V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6850 $51.3750
180+ $0.5621 $101.1780
280+ $0.5445 $152.4600
380+ $0.5270 $200.2600
495+ $0.5094 $252.1530
660+ $0.4567 $301.4220
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Availability: 8,000 pieces
MOQ: 75 pcs
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