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STL8DN10LF3

Part No STL8DN10LF3
Manufacturer STMicroelectronics
Catalog FETs - Arrays
Description Automotive-grade dual N-channel 100 V | MOSFET 2N-CH 100V 20A 5X6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 20A
Rds On (Maximum) at Id, Vgs 35mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 970pF at 25V
Maximum Power 70W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Manufacturer Package 8-PowerVDFN
Supplier Device Package PowerFlat (5x6)
Family Part Number ST*8DN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1261340-STL8DN10LF3
Manufacturer Homepage www.st.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STL8DN10LF3 CAD Model

Description

STL8DN10LF3 - N-Channel MOSFET by STMicroelectronics

The STL8DN10LF3 is a high-performance, N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This power MOSFET is engineered to meet the demanding requirements of modern electronic circuits, providing efficient power management and switching with low on-state resistance.

With its advanced STripFET™ III technology, the STL8DN10LF3 offers one of the best-in-class on-resistance versus gate charge trade-offs, making it an ideal choice for applications that require high efficiency and power density. This technology ensures that the device operates with reduced conduction losses, enhancing overall system efficiency.

The STL8DN10LF3 comes in a compact and robust PowerFLAT™ 5x6 package, which is designed to minimize the footprint on the PCB and optimize thermal performance. The package is highly suitable for space-constrained applications while providing excellent power dissipation capabilities.

Key Features:

  • Drain-source voltage (VDS): 100 V, which allows it to be used in higher voltage applications.
  • Continuous drain current (ID): 80 A, providing high current handling capability for heavy-duty operations.
  • Low threshold voltage (VGS(th)): This ensures that the MOSFET can be driven at lower gate voltages, reducing the power required to switch the device on and off.
  • Low gate charge (Qg): This feature contributes to faster switching speeds and reduced switching losses, ideal for high-frequency applications.
  • Ultra-low on-resistance (RDS(on)): Minimizes conduction losses and improves efficiency, especially important in power-saving modes.

Applications:

The STL8DN10LF3 is suitable for a wide range of applications, including:

  • DC/DC converters
  • Motor control circuits
  • Computing and server power supplies
  • Automotive applications and high-performance power management systems

In summary, the STL8DN10LF3 N-Channel MOSFET by STMicroelectronics stands out for its high efficiency, robustness, and versatility, making it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2702 $52.2146
54+ $1.8627 $100.5858
84+ $1.8045 $151.5780
115+ $1.7463 $200.8245
149+ $1.6881 $251.5269
199+ $1.5135 $301.1865
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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