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IRL6372PBF

Part No IRL6372PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description Battery operated DC motor inverter MOSFET | MOSFET 2N-CH 30V 8.1A 8SO
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity 2 N-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 8.1A
Rds On (Maximum) at Id, Vgs 17.9mOhm at 8.1A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 1.1V at 10μA
Gate Charge (Qg) (Maximum) at Vgs 11nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 1020pF at 25V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRL6372PBF
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1188522-IRL6372PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRL6372PBF CAD Model

Description

The IRL6372PBF from Infineon Technologies is a 2 N-Channel (Dual) MOSFET featuring a logic level gate and a maximum power of 2W.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8.1A
  • Input Capacitance: 1020pF @ 25V (Maximum)
  • Gate-Source Voltage Threshold: 1.1V @ 10μA
  • Gate Charge: 11nC @ 4.5V
  • Rds On (Maximum) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
  • Package: 8-SOIC
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8732 $52.3920
140+ $0.7165 $100.3100
220+ $0.6941 $152.7020
300+ $0.6717 $201.5100
390+ $0.6493 $253.2270
520+ $0.5821 $302.6920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,750 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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