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Same model may have multiple batches, images only for reference.
IRF300P226 Real Image
Same model may have multiple batches, images only for reference.

IRF300P226

Part No IRF300P226
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 100A TO247AC / N-Channel 300 V 100A (Tc) 556W (Tc) Through Hole TO-247AC
Datasheet
IRF300P226 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series StrongIRFET™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 191 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10030 pF @ 50 V
Power Dissipation (Max) 556W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
Base Product Number IRF300
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001582442
Standard Package 25
Win Source Part Number 1018876-IRF300P226
Ultra Librarian 3D Model Ultra Librarian IRF300P226 CAD Model

Description

The IRF300P226 is a N-Channel MOSFET transistor that belongs to Infineon Technologies' StrongIRFET™ series.

  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max): 19mOhm @ 45A, 10V
  • Vgs(th) (Max): 4V @ 270μA
  • Package: TO-247-3
  • Gate Charge (Qg) (Max): 191 nC @ 10 V

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