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Same model may have multiple batches, images only for reference.
IPW65R065C7XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPW65R065C7XKSA1

Part No IPW65R065C7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 33A TO247-3 / N-Channel 650 V 33A (Tc) 171W (Tc) Through Hole PG-TO247-3
Datasheet
IPW65R065C7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 17.1A, 10V
Vgs(th) (Max) @ Id 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 400 V
Power Dissipation (Max) 171W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW65R065
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001080116
Standard Package 30
Win Source Part Number 1206639-IPW65R065C7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW65R065C7XKSA1 CAD Model

Description

The IPW65R065C7XKSA1 is a MOSFET transistor from Infineon Technologies.

  • Maximum Drain to Source Voltage: 650V
  • Continuous Drain Current: 33A @ 25°C
  • On-Resistance: 65mOhm @ 17.1A and 10V
  • Package: TO-247-3
  • Gate Charge: 64nC @ 10V
  • Series: CoolMOS™ C7
  • Alternative Parts: IPW65R065C7, SP001080116

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