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Same model may have multiple batches, images only for reference.
IPW60R099C7XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPW60R099C7XKSA1

Part No IPW60R099C7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 14A TO247-3 / N-Channel 600 V 14A (Tc) 110W (Tc) Through Hole PG-TO247-3
Datasheet
IPW60R099C7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ C7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1819 pF @ 400 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW60R099
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001298004
Standard Package 30
Win Source Part Number 1025492-IPW60R099C7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R099C7XKSA1 CAD Model

Description

The Infineon Technologies 1025492-IPW60R099C7XKSA1 is an N-Channel MOSFET transistor from the CoolMOS™ C7 series.

  • Maximum Drain-Source Voltage: 600V
  • Continuous Drain Current: 14A
  • Maximum On-Resistance: 99mOhm
  • Gate Charge: 42 nC
  • Package: TO-247-3
  • Operating Temperature: -55°C to 150°C

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