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IPP023N08N5AKSA1

Part No IPP023N08N5AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 120A TO220-3 / N-Channel 80 V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 208µA
Gate Charge (Qg) (Max) @ Vgs 166 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12100 pF @ 40 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP023
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001132482
Standard Package 50
Win Source Part Number 1065280-IPP023N08N5AKSA1
Ultra Librarian 3D Model Ultra Librarian IPP023N08N5AKSA1 CAD Model

Description

The Infineon Technologies IPP023N08N5AKSA1 is a N-channel MOSFET transistor that is designed for discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 80V
  • Continuous Drain Current (Id): 120A (Tc) @ 25°C
  • Maximum Rds On: 2.3mOhm @ 100A, 10V
  • Gate Charge (Qg): 166 nC @ 10 V
  • Voltage Supply: 6V
  • Operating Temperatures: -55°C to 175°C
  • Mounting: Through hole
  • Package: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
22+ $2.3385 $51.4470
53+ $1.9188 $101.6964
81+ $1.8588 $150.5628
112+ $1.7989 $201.4768
144+ $1.7389 $250.4016
193+ $1.5590 $300.8870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,142 pieces
MOQ: 22 pcs
Order Increment : 1 pcs
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