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Same model may have multiple batches, images only for reference.
IPD30N06S2L23ATMA3 Real Image
Same model may have multiple batches, images only for reference.

IPD30N06S2L23ATMA3

Part No IPD30N06S2L23ATMA3
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 55V 30A TO252-3
Datasheet
IPD30N06S2L23ATMA3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Reel(TR)
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Rds On (Max) @ Id, Vgs 23 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2V @ 50μA
Gate Charge (Qg) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) @ Vds 1091pF @ 25V
Power - Max 100W
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style SMD/SMT
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Device Package PG-TO252-3-11
Win Source Part Number 108656-IPD30N06S2L23ATMA3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD30N06S2L23ATMA3 CAD Model

Description

The Infineon Technologies IPD30N06S2L23ATMA3 is an N-channel MOSFET transistor that is part of the OptiMOS series.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 30A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 50μA
  • Maximum Gate Charge: 42nC @ 10V
  • Package: TO-252-3
  • Suitable for: Surface-mount applications
  • Maximum Power Dissipation: 100W
  • Ideal for: Use in a wide range of applications

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220+ $0.7957 $175.0540
300+ $0.7701 $231.0300
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520+ $0.6674 $347.0480
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