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Same model may have multiple batches, images only for reference.
IPB80N08S406ATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB80N08S406ATMA1

Part No IPB80N08S406ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 80A TO263-3 / N-Channel 80 V 80A (Tc) 150W (Tc) Surface Mount PG-TO263-3-2
Datasheet
IPB80N08S406ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB80N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names INFINFIPB80N08S406ATMA1,2156-IPB80N08S406ATMA1,SP000984296
Standard Package 1,000
Win Source Part Number 1065230-IPB80N08S406ATMA1
Ultra Librarian 3D Model Ultra Librarian IPB80N08S406ATMA1 CAD Model

Description

It is unaffected by REACH and has an HTSUS of 8541.29.0095.

  • Type: N-Channel MOSFET
  • Drain to Source Voltage: 80V
  • Continuous Drain Current: 80A
  • Rds On (Max) @ 80A and 10V: 5.5mOhm
  • Gate Charge @ 10V: 70nC
  • Input Capacitance @ 25V: 4800pF
  • Operating Temperature Range: -55°C to 175°C
  • Suitable for: automotive applications

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