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Same model may have multiple batches, images only for reference.
IGW25N120H3 Real Image
Same model may have multiple batches, images only for reference.

IGW25N120H3

Part No IGW25N120H3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 50A 326W TO247-3
Datasheet
IGW25N120H3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Pulsed Collector Current 100A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 25A
Maximum Power Dissipation 326W
Total Switching Energy(Ets) 2.65mJ
Input Type Standard
Gate Charge 115nC
Turn-on and Turn-off delay time 27ns/277ns
Testing Conditions 600V, 25A, 23 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1003548-IGW25N120H3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IGW25N120H3 CAD Model

Description

The Infineon Technologies 1003548-IGW25N120H3 is a Trench Field Stop IGBT type transistor.

  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 50A
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V and 25A
  • Total Switching Energy: 2.65mJ
  • Turn-On Delay Time: 27ns
  • Turn-Off Delay Time: 277ns
  • Package: PG-TO247-3
  • Mounting Type: Through Hole

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