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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Bulk
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 41A
Pulsed Collector Current 82A
Collector-emitter saturation voltage(Max) 3.1V @ 15V, 21A
Maximum Power Dissipation 160W
Total Switching Energy(Ets) 1.95mJ (on), 1.71mJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 22ns/100ns
Testing Conditions 800V, 21A, 10 Ohm, 15V
Reverse Recovery Time (trr) 50ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AD
Win Source Part Number 067606-G4PH40UD2-E
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian G4PH40UD2-E CAD Model

Description

The Infineon Technologies 067606-G4PH40UD2-E is a high-performance IGBT transistor in a TO-247AD package.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 41A
  • Reverse Recovery Time: 50ns
  • Gate Charge: 100nC
  • Collector-Emitter Saturation Voltage: 3.1V @ 15V and 21A
  • Total Switching Energy: 1.95mJ (on), 1.71mJ (off)
  • Turn-On/Turn-Off Delay Time: 22ns/100ns
  • Status: Active
  • Supply and Demand Status: Limited

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