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BSZ0909LSATMA1

Part No BSZ0909LSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 19A/40A TSDSON / N-Channel 30 V 19A (Ta), 40A (Tc) Surface Mount PG-TDSON-8 FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™ 5
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 15 V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TDSON-8 FL
Package / Case 8-PowerTDFN
Base Product Number BSZ0909
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-BSZ0909LSATMA1CT,448-BSZ0909LSATMA1TR,SP005424000,448-BSZ0909LSATMA1DKR
Standard Package 5,000
Win Source Part Number 1228174-BSZ0909LSATMA1
Ultra Librarian 3D Model Ultra Librarian BSZ0909LSATMA1 CAD Model

Description

The Infineon Technologies BSZ0909LSATMA1 is an N-channel MOSFET transistor that has a drain to source voltage of 30 V and a continuous drain current of 19 A @ 25 degrees Celsius.

  • Channel Type: N-channel
  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 19 A @ 25 degrees Celsius
  • Rds On: 3 mOhm @ 20 A and 10 V
  • Gate Charge: 26 nC @ 10 V
  • Package: Tape and Reel
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5701 $59.8605
250+ $0.4679 $116.9750
385+ $0.4532 $174.4820
530+ $0.4386 $232.4580
685+ $0.4240 $290.4400
915+ $0.3801 $347.7915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 440 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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