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Same model may have multiple batches, images only for reference.
BSZ0909LSATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSZ0909LSATMA1

Part No BSZ0909LSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 19A/40A TSDSON  /  N-Channel 30 V 19A (Ta), 40A (Tc) Surface Mount PG-TDSON-8 FL
Datasheet
BSZ0909LSATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™ 5
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 15 V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TDSON-8 FL
Package / Case 8-PowerTDFN
Base Product Number BSZ0909
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-BSZ0909LSATMA1CT,448-BSZ0909LSATMA1TR,SP005424000,448-BSZ0909LSATMA1DKR
Standard Package 5,000
Win Source Part Number 1228174-BSZ0909LSATMA1
Ultra Librarian 3D Model Ultra Librarian BSZ0909LSATMA1 CAD Model

Description

The Infineon Technologies BSZ0909LSATMA1 is an N-channel MOSFET transistor that has a drain to source voltage of 30 V and a continuous drain current of 19 A @ 25 degrees Celsius.

  • Channel Type: N-channel
  • Drain to Source Voltage: 30 V
  • Continuous Drain Current: 19 A @ 25 degrees Celsius
  • Rds On: 3 mOhm @ 20 A and 10 V
  • Gate Charge: 26 nC @ 10 V
  • Package: Tape and Reel
  • Mounting: SMD (SMT)

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250+ $0.4679 $116.9750
385+ $0.4532 $174.4820
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685+ $0.4240 $290.4400
915+ $0.3801 $347.7915
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Availability: 440 pieces
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