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Same model may have multiple batches, images only for reference.
BSZ0905PNSATMA1 Real Image
Same model may have multiple batches, images only for reference.

BSZ0905PNSATMA1

Part No BSZ0905PNSATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 40A TDSON-8 / P-Channel 30 V 40A (Tc) 69W (Ta) Surface Mount PG-TDSON-8
Datasheet
BSZ0905PNSATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 1.9V @ 105µA
Gate Charge (Qg) (Max) @ Vgs 43.2 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3190 pF @ 15 V
Power Dissipation (Max) 69W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Base Product Number BSZ0905
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-BSZ0905PNSATMA1TR,SP005399015,448-BSZ0905PNSATMA1CT,448-BSZ0905PNSATMA1DKR
Standard Package 5,000
Win Source Part Number 971604-BSZ0905PNSATMA1
Ultra Librarian 3D Model Ultra Librarian BSZ0905PNSATMA1 CAD Model

Description

The Infineon Technologies BSZ0905PNSATMA1 is a P-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Power Rating (Max): 69 W
  • Drain-Source Voltage (Max): 30 V
  • Continuous Drain Current: 40 A @ Tc
  • Rds on: 8.6 mOhm @ 20 A and 10 V
  • Vgs(th): 1.9 V @ 105 μA
  • Package Type: 8-PowerTDFN
  • Supplier Device Package: PG-TDSON-8
  • Gate Charge: 43.2 nC @ 10 V
  • Input Capacitance: 3190 pF @ 15 V
  • Operating Temperature Range: -55°C to 150°C

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