The OptiMOS™ 1129756-BSZ039N06NSATMA1 is a MOSFET (Metal Oxide) N-Channel FET type with a drain to source voltage (Vdss) of 60 V and a current - continuous drain (Id) @ 25°C of 18A (Ta), 40A (Tc).

• FET Type: N-Channel MOSFET
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
• Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 3.3V @ 36µA
• Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
• Package/Case: 8-PowerTDFN
• Supplier Device Package: PG-TSDSON-8-FL
• Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
• Vgs (Max): ±20V
• Temperature Range - Operating: -55°C ~ 150°C (TJ)
• Alternative Parts (Cross-Reference): BSZ039N06NS
• Category: Transistors - FETs, MOSFETs - Single