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BSP297 E6327

Part No BSP297 E6327
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 200V 660MA SOT-223
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 660mA
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 1.8Ohm at 660mA, 10V
Gate Source Voltage(th) (Maximum) at Id 1.8V at 400μA
Gate Charge (Qg) (Maximum) at Vgs 16.1nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 357pF at 25V
Power Dissipation (Maximum) 1.8W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PG-SOT223-4
Manufacturer Package TO-261-4, TO-261AA
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 730117-BSP297 E6327
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP297 E6327 CAD Model

Description

The Infineon Technologies BSP297 E6327 MOSFET is a high-performance electronic component that is widely used in various applications.

  • Component Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 660mA
  • Maximum Rds On: 1.8Ohm @ 660mA and 10V
  • Maximum Power Dissipation: 1.8W
  • Package: Tape and Reel
  • Mounting Technology: SMD
  • Dimension: PG-SOT223-4
  • Operating Temperature Range: -55°C to 150°C
  • Supply and Demand Status: Balanced
  • Manufacturer Pack Quantity: 1,000
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.4454 $57.9020
320+ $0.3654 $116.9280
490+ $0.3541 $173.5090
675+ $0.3427 $231.3225
875+ $0.3313 $289.8875
1,170+ $0.2970 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,151 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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