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BSC080N03LS G Real Image BSC080N03LS G Real Image1 BSC080N03LS G Real Image2
Same model may have multiple batches, images only for reference.
BSC080N03LS G Real Image BSC080N03LS G Real Image1 BSC080N03LS G Real Image2
BSC080N03LS G Real Image BSC080N03LS G Real Image1 BSC080N03LS G Real Image2
Same model may have multiple batches, images only for reference.

BSC080N03LS G

Part No BSC080N03LS G
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CH 30V 53A TDSON-8 / Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Standard Package 1
Category Discrete Semiconductor Products
Family FETs - Single
Series OptiMOS
Packaging Reel
FET Type MOSFET N-Channel Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14A (Ta) 53A (Tc)
Rds On (Max) @ Id Vgs 8 mOhm @ 30A 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) @ Vds 1700pF @ 15V
Power - Max 35W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package 8-PowerTDFN
Manufacturer Device Package PG-TDSON-8
Catalog N-Channel Logic Level Gate FETs
Win Source Part Number 079690-BSC080N03LS G
Popularity Medium
Supply and Demand Status Balance
Family Name BSC080N03LS
Introduction Date July 11, 2007
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian BSC080N03LS G CAD Model

Description

BSC080N03LS G MOSFET

The BSC080N03LS G is an N-channel MOSFET recognized for its high-speed switching capabilities and low on-state resistance, which are critical for optimizing energy efficiency in electronic devices.

  • Applications/Projects:
    • Solar inverters
    • Power supplies
    • Uninterruptible power supplies (UPS)
    • Electric vehicle systems

Features and Benefits

  • Enhanced energy efficiency
  • Low on-state resistance for reduced energy loss
  • High-speed switching for rapid operations
  • Highly reliable under various operating conditions
  • Compact package for versatile design integration

The BSC080N03LS G MOSFET is engineered for demanding environments, ensuring longevity and performance in sectors where energy efficiency is paramount.

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