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BGB550E6327

Part No BGB550E6327
Manufacturer Infineon Technologies
Catalog RF Amplifiers
Description Mirror Biased RF Transistor
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category RF/IF and RFID
Family RF Amplifiers
Manufacturer Infineon Technologies
Win Source Part Number 235289-BGB550E6327
Popularity Low
Supply and Demand Status Sufficient
Family Name BGB 550
Introduction Date January 19, 2001
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian BGB550E6327 CAD Model

Description

Product Description

The BGB550E6327 is a high-frequency transistor optimized for minimal distortion and high linearity. This component is instrumental in maintaining signal integrity in RF systems.

Applications

  • Network communication terminals
  • RF test and measurement equipment
  • Advanced electronic warfare systems
  • High-performance local oscillators

Features and Benefits

  • Superior linearity: Ensures high-fidelity signal reproduction.
  • Compact package: Convenient for dense circuit designs.
  • Low thermal resistance: Improves operational stability.
  • Wide operating temperature range: Suitable for various environments.

Additional Details

Known for its precision and reliability, the BGB550E6327 is trusted in applications requiring tight performance specifications while minimizing overall system noise.

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