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MML20211HT1

Part No MML20211HT1
Manufacturer NXP / Nexperia
Catalog RF Amplifiers
Description IC RF AMP LTE 1.4GHZ-2.8GHZ 8DFN / RF Amplifier IC LTE, TDS-CDMA, W-CDMA 1.4GHz ~ 2.8GHz 8-DFN (2x2)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category RF and Wireless - RF Amplifiers
Mfr NXP USA Inc.
Package Tape & Reel
Product Status Obsolete
Frequency 1.4GHz ~ 2.8GHz
P1dB 21.3dBm
Gain 18.6dB
Noise Figure 0.65dB
RF Type LTE, TDS-CDMA, W-CDMA
Voltage - Supply 5V
Current - Supply 60mA
Test Frequency 2.14GHz
Mounting Type Surface Mount
Package / Case 8-VFDFN Exposed Pad
Supplier Device Package 8-DFN (2x2)
Base Product Number MML20211
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN 5A991G
HTSUS 8542.33.0001
Win Source Part Number 1345933-MML20211HT1
Ultra Librarian 3D Model Ultra Librarian MML20211HT1 CAD Model

Description

The MML20211HT1 is a cutting-edge RF Power LDMOS transistor from the renowned semiconductor manufacturer NXP Semiconductors. This high-performance transistor is designed to meet the rigorous demands of modern radio frequency applications, offering a perfect blend of power, efficiency, and reliability.

Key Features:

  • Frequency Range: The MML20211HT1 operates efficiently across a broad frequency range, making it versatile for various RF applications including broadband, industrial, and commercial systems.
  • High Output Power: Engineered to deliver a high output, this LDMOS transistor is capable of producing up to 11 watts of continuous wave power, ensuring strong signal transmission and reception.
  • High Gain: With an excellent gain performance, the MML20211HT1 ensures amplified signal strength, which is crucial for maintaining the integrity of the communication link.
  • Efficiency: Energy efficiency is a hallmark of this transistor, reducing operational costs and heat generation, which in turn extends the lifespan of the product and the system it is used in.
  • Thermal Performance: The device boasts superior thermal performance, thanks to its advanced heat dissipation capabilities, which help maintain stable operation even under high load conditions.
  • Durability: Built to last, the MML20211HT1 is manufactured with robust materials that can withstand harsh environmental conditions, ensuring long-term reliability.

Applications:

The versatility of the MML20211HT1 allows it to be used in a wide array of applications. It is particularly suited for RF energy applications such as RF heating, plasma generation, and medical therapeutic devices. Additionally, it is an excellent choice for RF power amplifiers in broadband communications, as well as for use in industrial, scientific, and medical (ISM) applications.

Quality and Support:

NXP's commitment to quality is evident in the MML20211HT1, which is produced in state-of-the-art manufacturing facilities. Customers can also rely on NXP's global support network for any technical assistance and guidance needed for integrating this powerful LDMOS transistor into their systems.

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