The HY5117800BT-60 is a 16M-bit Dynamic RAM (DRAM) organized as 2,097,152 words x 8 bits. Manufactured by Hynix Semiconductor, this DRAM is designed for applications requiring high memory capacity and fast access times. It leverages advanced process technology to deliver reliable performance and low power consumption.

Applications

• Main memory in personal computers
• Graphics memory in video cards
• Buffer memory in high-speed printers
• Memory for network devices
• Storage for embedded systems and industrial automation

Features

• High density: 16M-bit capacity
• Fast access time: 60ns
• Single 5V power supply
• TTL compatible inputs and outputs
• Refresh modes: Self-refresh, Hidden refresh
• Package: SOJ (Small Outline J-lead) package

Benefits

• Increased memory capacity for demanding applications
• Improved system performance due to fast access time
• Simplified power supply requirements
• Easy integration with standard logic circuits
• Efficient memory management through various refresh options
• Compact form factor due to the SOJ package

Technical Specifications

The HY5117800BT-60 operates on a single 5V ± 10% power supply. The active power consumption is typically around 400mW, while the standby power consumption is significantly lower. The input and output signals are fully TTL compatible. The refresh cycle time is typically 64ms. The operating temperature range is usually from 0°C to +70°C. It comes in a standard SOJ package, suitable for surface mount technology.

The HY5117800BT-60 is a good solution for applications that demand a significant amount of memory and require fast data access. The 2,097,152 words x 8 bits organization allows for efficient storage and retrieval of byte-oriented data. The low power consumption makes it suitable for a variety of devices, including those that are battery-powered or require low heat dissipation. The compact SOJ package allows for high-density board layouts.