The 2SJ182 is a P-channel MOS Field Effect Transistor (MOSFET) manufactured by Hitachi, Ltd. It is specifically designed for audio amplifier applications, particularly in high-fidelity audio systems. This MOSFET offers excellent linearity and low distortion characteristics, making it ideal for achieving high-quality audio reproduction.

Applications

• Audio Power Amplifiers
• High-Fidelity Audio Systems
• Line Amplifiers
• Headphone Amplifiers
• General Purpose Amplification

Features

• P-Channel MOSFET
• High Input Impedance
• Low On-Resistance (RDS(on))
• Excellent Linearity
• Low Distortion

Benefits

• High-Quality Audio Reproduction: Delivers high-quality audio reproduction with minimal distortion.
• Efficient Amplification: Provides efficient amplification with low on-resistance, reducing power losses.
• Easy to Drive: High input impedance simplifies driving circuitry.
• Improved Signal Clarity: Excellent linearity ensures accurate signal amplification.
• Reliable Performance: Designed for reliable performance in audio applications.

Technical Specifications (Typical)

• Drain-Source Voltage (VDSS): -160V
• Gate-Source Voltage (VGSS): ±20V
• Drain Current (ID): -7A
• Power Dissipation (PD): 50W (with adequate heat sinking)
• On-Resistance (RDS(on)): 0.8 Ohms (Typical)
• Input Capacitance (Ciss): 800 pF (Typical)
• Output Capacitance (Coss): 200 pF (Typical)

The 2SJ182 MOSFET requires proper heat sinking to manage power dissipation effectively. Its low on-resistance and excellent linearity make it a popular choice for high-end audio amplifier designs where sound quality is paramount.