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IRFP245

Name: IRFP245
Brand: Harris Corporation
SKU: 1214564
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRFP245
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET / N-Channel 250 V 14A (Tc) 150W (Tc) Through Hole TO-247
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Harris Corporation
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	340mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
Power Dissipation (Max)	150W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
RoHS Status	RoHS non-compliant
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	HARHARIRFP245,2156-IRFP245
Standard Package	1
Win Source Part Number	1214564-IRFP245
Ultra Librarian 3D Model	Ultra Librarian IRFP245 CAD Model

Alternative Products

Description

The IRFP245 is a single N-channel MOSFET transistor with a maximum power dissipation of 150 W (Tc).

Maximum Power Dissipation: 150 W (Tc)
Drain-Source Voltage: 250 V
Continuous Drain Current: 14A (Tc)
Maximum On-State Resistance: 340mOhm @ 10A and 10V gate-source voltage
Gate Threshold Voltage: 4V @ 250µA
Gate Charge: 59 nC @ 10 V gate-source voltage
Input Capacitance: 1300 pF @ 25 V drain-source voltage
Manufacturer: Harris Corporation
RoHS Status: Non-compliant

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