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GC11N65K

Part No GC11N65K
Manufacturer Goford Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N650V,RD(MAX)<360M@10V,VTH2.5V~4 / N-Channel 650 V 11A (Tc) 78W (Tc) Surface Mount TO-252
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Goford Semiconductor
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 901 pF @ 50 V
Power Dissipation (Max) 78W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
MSL Level 3 (168 Hours)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 3141-GC11N65KTR,3141-GC11N65KDKR,3141-GC11N65KCT
Standard Package 2,500
Win Source Part Number 1145074-GC11N65K
Ultra Librarian 3D Model Ultra Librarian GC11N65K CAD Model

Description

The 1145074-GC11N65K is an N-channel MOSFET transistor designed for use in discrete semiconductor products such as FETs and MOSFETs.

  • Channel Type: N-Channel
  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 11A
  • Power Dissipation: 78W
  • Rds On (Max): 360mOhm @ 5.5A and 10V
  • Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier: Goford Semiconductor

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6506 $52.0480
165+ $0.6095 $100.5675
255+ $0.5889 $150.1695
370+ $0.5477 $202.6490
475+ $0.5271 $250.3725
595+ $0.5065 $301.3675
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,650 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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