The X2864AEI-35 is a 64K (8K x 8) EEPROM (Electrically Erasable Programmable Read-Only Memory) manufactured by NXP (formerly Freescale Semiconductor). It is a non-volatile memory device that can be electrically erased and reprogrammed, offering a reliable solution for storing configuration data, calibration parameters, and other critical information in embedded systems.

Applications

• Storage of configuration settings in industrial control equipment
• Parameter storage in programmable logic controllers (PLCs)
• Data logging in instrumentation systems
• Storing calibration data in medical devices
• Firmware storage in embedded systems

Features

• 64K (8K x 8) bit organization: Provides sufficient storage for various applications.
• Electrically Erasable and Programmable: Allows for in-system updates and modifications.
• Fast Access Time (35ns): Enables quick data retrieval.
• Self-Timed Write Cycle: Simplifies write operations.
• Automatic Page Write Operation: Enhances write performance.
• Data Protection: Prevents accidental data corruption.
• Low Power Consumption: Suitable for battery-powered devices.
• Industry Standard Pinout: Facilitates easy integration into existing designs.

Benefits

• Non-volatile storage solution: Retains data even when power is removed.
• In-system programmability: Allows for remote updates and configuration changes.
• Fast access time: Ensures quick retrieval of stored data.
• Easy integration: Compatible with standard microprocessor interfaces.
• Reliable data storage: Guarantees data integrity and longevity.

Additional Details

The X2864AEI-35 typically comes in a DIP (Dual In-line Package) or SOIC (Small Outline Integrated Circuit) package. The datasheet provides comprehensive information regarding timing diagrams, electrical characteristics, and write cycle specifications. It is crucial to consult the datasheet for proper implementation and to ensure optimal performance. The X2864AEI-35 is a versatile EEPROM suitable for a wide range of embedded applications requiring reliable and reprogrammable non-volatile memory.