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QSB363ZR

Part No QSB363ZR
Manufacturer Fairchild/ON Semiconductor
Catalog Optical Sensors - Phototransistors
Description PHOTOTRANS IR 940NM GW TOPLOOKER
Datasheet
Sample
Rohs State rohs
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Categories Sensors, Transducers
Manufacturer Fairchild/ON Semiconductor
Packaging Reel - TR
Status Active
VCEO Maximum Collector-Emitter Breakdown Voltage 30V
Maximum Current Collector 2mA
Current - Dark (Id) (Max) 100nA
Wavelength 940nm
Viewing Angle 24°
Maximum Power Dissipation 75mW
Mounting SMD (SMT)
Orientation Top View
Temperature Range - Operating -40°C to 85°C (TA)
Dimension 2-SMD, Z-Bend
Win Source Part Number 027065-QSB363ZR
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian QSB363ZR CAD Model

Description

The QSB363ZR is a silicon NPN phototransistor designed for high sensitivity and is manufactured by Fairchild/ON Semiconductor. It's designed to detect infrared radiation and convert it into an electrical signal. The device is packaged in a black plastic package to filter out visible light.

Applications:

  • Infrared remote control systems
  • Light sensors
  • Optical switches
  • Bar code scanners
  • Object detection systems

Features:

  • High sensitivity to infrared radiation: Enables reliable detection of IR signals.
  • NPN Phototransistor: Operates as a light-sensitive transistor.
  • Black plastic package: Filters out visible light, enhancing IR detection.
  • Fast response time: Allows for high-speed data transmission and detection.
  • Compact size: Suitable for space-constrained applications.

Benefits:

  • Improved remote control performance: Reliable IR signal detection ensures accurate control.
  • Accurate light sensing: Enables precise measurement of light intensity.
  • Efficient object detection: Allows for reliable detection of objects in various applications.
  • Enhanced system responsiveness: Fast response time improves overall system performance.
  • Easy integration: Compact size simplifies integration into existing circuits.

Technical Specifications:

The QSB363ZR features a specific spectral response tailored to infrared wavelengths. The collector-emitter voltage (VCE) and collector current (IC) ratings specify the allowable operating range. The device's sensitivity is typically measured in terms of collector current at a specific irradiance level. The viewing angle determines the field of view for IR detection. The black package helps to reduce interference from ambient visible light. Detailed specifications can be found in the manufacturer's datasheet from ON Semiconductor or formerly Fairchild Semiconductor.

The QSB363ZR phototransistor is a good choice for applications requiring high sensitivity and reliable detection of infrared radiation, particularly in environments with ambient visible light. Its features and benefits make it suitable for a wide range of sensing and control applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2843 $58.2815
500+ $0.2333 $116.6500
770+ $0.2261 $174.0970
1,060+ $0.2188 $231.9280
1,370+ $0.2114 $289.6180
1,830+ $0.1896 $346.9680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 63,000 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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