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Same model may have multiple batches, images only for reference.
HUF76113DK8T Real Image
Same model may have multiple batches, images only for reference.

HUF76113DK8T

Part No HUF76113DK8T
Manufacturer Fairchild/ON Semiconductor
Catalog FETs - Arrays
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Fairchild/ON Semiconductor
Series UltraFET®
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Rds On (Max) @ Id, Vgs 32mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 605pF @ 25V
Power - Max 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-VFSOP (0.091", 2.30mm Width)
Supplier Device Package US8
Base Product Number HUF76113
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 149015-HUF76113DK8T
Ultra Librarian 3D Model Ultra Librarian HUF76113DK8T CAD Model

Description

The Fairchild/ON Semiconductor 149015-HUF76113DK8T is a dual N-channel MOSFET array designed for discrete semiconductor applications.

  • Series: UltraFET™
  • Gate Type: Logic Level
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6A @ 25°C
  • Maximum On-Resistance (Rds On): 32mOhm @ 6A and 10V
  • Gate Threshold Voltage (Vgs(th)): 3V @ 250µA
  • Maximum Power Dissipation: 2.5W @ ambient temperature
  • Configuration: Dual N-channel MOSFET
  • Mounting: Surface mount technology
  • Package/Case: 8-VFSOP
  • Gate Charge (Qg): 19.2nC @ 10V
  • Input Capacitance (Ciss): 605pF @ 25V
  • Operating Temperature Range: -55°C to 150°C
  • Status: Active

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