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Same model may have multiple batches, images only for reference.
10N120BND Real Image
Same model may have multiple batches, images only for reference.

10N120BND

Part No 10N120BND
Manufacturer Fairchild/ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 35A 298W TO247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Fairchild/ON Semiconductor
Packaging Tube/Rail
Status Not For New Designs
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 35A
Pulsed Collector Current 80A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 10A
Maximum Power Dissipation 298W
Total Switching Energy(Ets) 850μJ (on), 800μJ (off)
Input Type Standard
Gate Charge 100nC
Turn-on and Turn-off delay time 23ns/165ns
Testing Conditions 960V, 10A, 10 Ohm, 15V
Reverse Recovery Time (trr) 70ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 197246-10N120BND
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 10N120BND CAD Model

Description

Description

The 10N120BND is an IGBT (Insulated Gate Bipolar Transistor) that provides a convenient solution for high-frequency switching applications.

Key Features

  • Collector-Emitter Voltage: 1200V
  • Continuous Collector Current: 10A
  • Low saturation voltage
  • High-speed switching

Applications

  • Motor Drives
  • Induction Heating
  • Uninterruptible Power Supplies
  • Welding Equipment

Benefits

  • Enhanced performance in switching applications
  • Minimal conduction losses
  • Reliable and robust construction

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