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DMT4014LDV-7

Part No DMT4014LDV-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 31V~40V POWERDI333  /  Mosfet Array 2 N-Channel (Dual) 40V 8.5A (Ta), 26.5A (Tc) 1W (Ta) Surface Mount PowerDI3333-8 (Type UXC)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 26.5A (Tc)
Rds On (Max) @ Id, Vgs 19mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 20V
Power - Max 1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-PowerVDFN
Supplier Device Package PowerDI3333-8 (Type UXC)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 31-DMT4014LDV-7TR
Standard Package 2,000
Win Source Part Number 959491-DMT4014LDV-7
Ultra Librarian 3D Model Ultra Librarian DMT4014LDV-7 CAD Model

Description

DMT4014LDV-7 - A High-Performance MOSFET from Diodes Incorporated

The DMT4014LDV-7 is a state-of-the-art MOSFET device engineered by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This particular MOSFET is designed to cater to a wide array of applications, including power management, load switching, and DC-DC conversion in computing, consumer electronics, and industrial systems.

With its compact form factor, the DMT4014LDV-7 is housed in a space-saving PowerDI3333-8 package, which not only reduces the footprint on the printed circuit board (PCB) but also enhances thermal performance, allowing for efficient heat dissipation during operation. This makes the DMT4014LDV-7 an excellent choice for applications where space is at a premium and thermal efficiency is crucial.

The DMT4014LDV-7 boasts impressive electrical characteristics that contribute to its high efficiency and reliability. It features a drain-source voltage (V<sub>DS) of 40V, which ensures it can handle moderate voltage applications with ease. The device has a continuous drain current (I<sub>D) of 30A, making it capable of driving significant loads without compromising performance. Additionally, its low on-resistance (R<sub>DS(on)) minimizes conduction losses, leading to an overall reduction in power dissipation and improved energy savings.

One of the key advantages of the DMT4014LDV-7 is its fast switching speed, which is essential for high-frequency applications. The low gate charge (Q<sub>G) and low input capacitance (C<sub>iss) contribute to this swift switching capability, providing designers with a component that responds quickly to control signals and enhances the efficiency of power conversion circuits.

For protection and longevity, the DMT4014LDV-7 incorporates built-in features such as electrostatic discharge (ESD) protection. This ensures the device is robust against inadvertent static discharges, which can be particularly beneficial in environments where ESD events are a common concern.

In summary, the DMT4014LDV-7 from Diodes Incorporated is a versatile and efficient MOSFET that combines compact packaging with exceptional electrical performance. Its thermal efficiency, high current capacity, and fast switching speeds make it a top choice for designers looking to optimize their power management and conversion applications.

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