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DMT3009LDT-7

Part No DMT3009LDT-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET 2N-CH 30V 30A V-DFN3030-8 / N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Diodes Incorporated
Packaging Reel
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 30A
Rds On (Maximum) at Id, Vgs 11.1mOhm at 14.4A, 10V
Vgs(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 20nC at 15V
Input Capacitance (Ciss) (Maximum) at Vds 1500pF at 15V
Power - Max 1.2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-VDFN Exposed Pad
Supplier Device Package V-DFN3030-8 (Type K)
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803644-DMT3009LDT-7
Ultra Librarian 3D Model Ultra Librarian DMT3009LDT-7 CAD Model

Description

Introducing the DMT3009LDT-7 Mosfet from Diodes Incorporated

The DMT3009LDT-7 is a state-of-the-art, dual N-Channel enhancement mode field effect transistor (Mosfet) designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This high-performance, surface-mount transistor is engineered to meet the increasing demands of modern electronic circuits, offering efficient power management and signal processing in a compact form factor.

Key Features of DMT3009LDT-7

  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)), which translates to higher efficiency and reduced power losses during operation, making it suitable for power-sensitive applications.
  • High-Speed Switching: With its fast switching capabilities, the DMT3009LDT-7 is ideal for high-frequency applications, ensuring minimal delay and improved performance in circuits that require rapid state changes.
  • Dual N-Channel Configuration: The dual N-Channel setup allows for flexibility in design, enabling the creation of more compact circuit layouts by integrating two independent transistors in one package.
  • PowerDI®3333-8 Package: Encased in the proprietary PowerDI®3333-8 package, the DMT3009LDT-7 offers enhanced thermal performance and a small footprint, which is perfect for space-constrained applications.
  • Lead-Free and RoHS Compliant: In line with environmental standards, this product is lead-free and RoHS compliant, minimizing the ecological footprint and allowing for use in a wide range of consumer electronics.

Applications

The DMT3009LDT-7 is versatile and can be used in various applications, including:

  • Power Management Systems
  • DC-DC Converters
  • Load Switches
  • Battery Management Systems
  • Computing and Networking Systems

Reliability and Performance

Diodes Incorporated is committed to delivering products that stand the test of time. The DMT3009LDT-7 is built with reliability in mind, ensuring stable operation even under challenging conditions. Its performance is backed by rigorous testing and adherence to stringent quality control measures, providing engineers and designers with confidence in their choice of components.

With its combination of efficiency, high-speed operation, and compact packaging, the DMT3009LDT-7 is an excellent choice for modern electronic designs that require the best in Mosfet technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.2685 $51.0150
455+ $0.2203 $100.2365
705+ $0.2134 $150.4470
970+ $0.2065 $200.3050
1,255+ $0.1996 $250.4980
1,680+ $0.1790 $300.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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