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ZXMD63C02XTC

Part No ZXMD63C02XTC
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET | MOSFET N/P-CH 20V 8MSOP
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N and P-Channel
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 20V
Rds On (Maximum) at Id, Vgs 130mOhm at 1.7A, 4.5V
Gate Source Voltage(th) (Maximum) at Id 700mV at 250μA (Minimum)
Gate Charge (Qg) (Maximum) at Vgs 6nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 350pF at 15V
Maximum Power 1.04W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-TSSOP, 8-MSOP
Supplier Device Package 8-MSOP
Manufacturer Pack Quantity 4,000
MSL Level 1 (Unlimited)
Win Source Part Number 1283419-ZXMD63C02XTC
Manufacturer Homepage www.diodes.com/
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian ZXMD63C02XTC CAD Model

Description

Product Overview: ZXMD63C02XTC from Diodes Incorporated

The ZXMD63C02XTC is a high-performance, dual P-channel enhancement mode MOSFET from Diodes Incorporated, designed to deliver efficient power management and control in a compact package. This advanced semiconductor device is tailored for a wide range of applications, including load switching, power management, and other circuits where a low on-resistance and high switching speed are essential.

Key Features:

  • Low On-Resistance: The device features an exceptionally low on-resistance, which minimizes power loss and enhances overall efficiency, making it suitable for power-intensive applications.
  • High-Speed Switching: With its fast switching capabilities, the ZXMD63C02XTC can handle high-frequency operations, contributing to improved performance in various electronic circuits.
  • Dual P-Channel MOSFET: The integration of two P-channel MOSFETs in a single package allows for reduced component count and simplified design in applications requiring complementary or dual P-channel configurations.
  • Power-SO8 Package: Encased in a Power-SO8 package, the ZXMD63C02XTC offers a compact footprint while ensuring good thermal performance and reliability.
  • RoHS Compliant: Adhering to environmental standards, this product is RoHS compliant, reflecting Diodes Incorporated's commitment to reducing the environmental impact of their components.

Applications:

The ZXMD63C02XTC is versatile and can be employed in a variety of applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Load Switching
  • Motor Control Circuits

Technical Specifications:

Below are some of the key technical specifications of the ZXMD63C02XTC:

  • Drain-Source Voltage (VDS): -20V
  • Continuous Drain Current (ID): -4.3A
  • Power Dissipation (PD): 1.4W
  • Operating Temperature Range: -55°C to +150°C

With its robust design and advanced features, the ZXMD63C02XTC from Diodes Incorporated stands out as a reliable and efficient solution for modern electronic applications requiring high-performance power management.

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