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DMN30H4D1S-7

Part No DMN30H4D1S-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 430MA SOT23 / N-Channel 300 V 430mA (Ta) 360mW (Ta) Surface Mount SOT-23-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 174 pF @ 25 V
Power Dissipation (Max) 360mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMN30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names DMN30H4D1S-7DI
Standard Package 3,000
Win Source Part Number 1055767-DMN30H4D1S-7
Ultra Librarian 3D Model Ultra Librarian DMN30H4D1S-7 CAD Model

Description

DMN30H4D1S-7 MOSFET by Diodes Incorporated

The DMN30H4D1S-7 is a high-performance, dual N-channel enhancement mode field-effect transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is particularly suited for compact and energy-efficient applications, thanks to its small form factor and low on-resistance. It is encapsulated in a surface-mount SOT-363 package, which provides a space-saving solution for modern electronic circuits.

Key Features:

  • Low On-Resistance: The DMN30H4D1S-7 offers a very low on-resistance (RDS(on)), which ensures minimal power loss and enhanced efficiency during operation. This characteristic is crucial for power management in portable devices where battery life is essential.
  • Dual N-Channel Configuration: The dual N-channel setup allows for the integration of two independent MOSFETs in a single package, reducing the overall component count and simplifying the design process for engineers.
  • High-Speed Switching: This MOSFET is designed for fast switching applications. Its quick response time makes it an excellent choice for high-frequency circuits, contributing to better performance in power conversion and management tasks.
  • Low Threshold Voltage: The low threshold voltage ensures that the DMN30H4D1S-7 can be driven at lower gate voltages, making it compatible with low-voltage logic levels and suitable for interfacing with microcontrollers and other digital circuits.
  • Lead-Free and RoHS Compliant: In line with environmental standards, the DMN30H4D1S-7 is lead-free and RoHS compliant, making it a responsible choice for electronic manufacturers concerned about ecological impact.

Applications:

The DMN30H4D1S-7 is versatile and can be used in a wide range of applications, including:

  • Power management for portable devices like smartphones, tablets, and laptops.
  • DC-DC converters where efficiency and space constraints are critical.
  • Load switch circuits that require a compact and efficient solution.
  • Motor control systems in need of precise and efficient switching.

Overall, the DMN30H4D1S-7 by Diodes Incorporated stands out for its efficiency, compactness, and versatility, making it a top choice for designers looking to optimize their electronic designs for both performance and space.

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