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DMN2053UWQ-7

Part No DMN2053UWQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 8V~24V SOT323 T&R / N-Channel 20 V 2.9A (Ta) 2.9A (Ta) Surface Mount SOT-323
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 56mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.6 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 369 pF @ 10 V
Power Dissipation (Max) 2.9A (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-323
Package / Case SC-70, SOT-323
ECCN EAR99
HTSUS 8541.21.0095
Other Names 31-DMN2053UWQ-7TR
Standard Package 3,000
Win Source Part Number 1142827-DMN2053UWQ-7
Ultra Librarian 3D Model Ultra Librarian DMN2053UWQ-7 CAD Model

Description

Product Overview: DMN2053UWQ-7 from Diodes Incorporated

The DMN2053UWQ-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is part of Diodes Incorporated's extensive range of discrete, analog, and mixed-signal semiconductors, tailored for efficient performance and reliability in a variety of electronic applications.

Constructed with advanced trench technology, the DMN2053UWQ-7 offers a low on-resistance (RDS(on)) and a low gate charge (Qg), making it an excellent choice for high efficiency power management tasks. The device is housed in an ultra-small leadless DFN2020-6 (WQFN6) package, which is not only space-saving but also offers low thermal resistance, enabling the MOSFET to operate at lower temperatures and thus enhancing its longevity and reliability.

Key Features:

  • Low On-Resistance: The DMN2053UWQ-7 boasts a very low RDS(on), which results in reduced conduction losses and improved overall efficiency in circuits where it is deployed.
  • High Continuous Drain Current: It can handle a high continuous drain current (ID), making it suitable for high current applications.
  • High-Speed Switching: The device is optimized for fast switching speeds, which is beneficial for high-frequency power switching applications.
  • Low Threshold Voltage: With a low threshold voltage (VGS(th)), this MOSFET can be easily driven at lower gate voltages, making it compatible with low voltage logic level circuits.
  • RoHS Compliant: The DMN2053UWQ-7 is compliant with RoHS standards, ensuring that it is free from hazardous substances and environmentally friendly.

Applications:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Battery Management Systems
  • Motor Control

The DMN2053UWQ-7 from Diodes Incorporated represents a blend of modern semiconductor technology with practical design, addressing the needs of contemporary electronic devices that demand efficient power handling, compact design, and reliable operation. Whether you're developing power supplies, portable devices, or complex motor control systems, the DMN2053UWQ-7 is engineered to deliver superior performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
440+ $0.1138 $50.0720
1,075+ $0.0934 $100.4050
1,660+ $0.0905 $150.2300
2,285+ $0.0876 $200.1660
2,955+ $0.0847 $250.2885
3,955+ $0.0759 $300.1845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 440 pcs
Order Increment : 1 pcs
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