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DMN2025UFDB-7

Part No DMN2025UFDB-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET BVDSS: 8V-24V U-DFN2020-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 486pF @ 10V
Power - Max 700mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad
Supplier Device Package U-DFN2020-6 (Type B)
Base Product Number DMN2025
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1376902-DMN2025UFDB-7
Ultra Librarian 3D Model Ultra Librarian DMN2025UFDB-7 CAD Model

Description

The DMN2025UFDB-7 is a high-performance, N-channel MOSFET produced by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This particular MOSFET is designed for power switching and management applications, offering efficient power conversion with minimal losses. It is a suitable component for a wide range of electronic devices and circuits where low on-resistance and high switching speeds are of paramount importance.

Key Features

  • Low On-Resistance: The DMN2025UFDB-7 boasts an exceptionally low on-resistance (RDS(on)), which ensures reduced power loss and improved efficiency in operation.
  • High Continuous Drain Current: It supports a high continuous drain current (ID), enabling it to handle high power applications without performance degradation.
  • Advanced Packaging: Housed in a compact DFN2020 package, the DMN2025UFDB-7 offers excellent thermal performance and a small footprint, making it ideal for space-constrained applications.
  • High-Speed Switching: This MOSFET is designed for fast switching applications, reducing transition losses and improving overall performance.
  • Low Threshold Voltage: A low gate threshold voltage (VGS(th)) allows for easy drive capability and efficient operation at lower voltages.

Applications

The DMN2025UFDB-7 is versatile and can be used in a variety of applications, including:

  • Power management systems
  • DC/DC converters
  • Load switches
  • Battery management circuits
  • Motor control circuits
  • Computing and networking systems

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products. The DMN2025UFDB-7 is built to meet stringent quality standards, ensuring reliable performance in even the most demanding situations. With its robust construction and proven design, this MOSFET is a dependable choice for engineers and designers looking to optimize their power management solutions.

Environmental Compliance

The DMN2025UFDB-7 is compliant with RoHS and Green standards, reflecting Diodes Incorporated's dedication to environmental responsibility. Customers can trust that they are choosing a product that not only meets high performance criteria but also contributes to a more sustainable future.

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3086 $50.9190
395+ $0.2532 $100.0140
615+ $0.2453 $150.8595
845+ $0.2374 $200.6030
1,090+ $0.2295 $250.1550
1,460+ $0.2057 $300.3220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,820 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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