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DMN1006UCA6-7

Part No DMN1006UCA6-7
Manufacturer Diodes Incorporated
Catalog FETs - Arrays
Description MOSFET 2 N-CHANNEL X3-DSN2718-6 / N-CHANNEL ENHANCEMENT MODE MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer Diodes Incorporated
Packaging Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Vgs(th) (Maximum) at Id 1.3V at 1mA
Gate Charge (Qg) (Maximum) at Vgs 35.2nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds 2360pF at 6V
Power - Max 2.4W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 6-SMD, No Lead
Supplier Device Package X3-DSN2718-6
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 803748-DMN1006UCA6-7
Ultra Librarian 3D Model Ultra Librarian DMN1006UCA6-7 CAD Model

Description

DMN1006UCA6-7 Dual N-Channel Enhancement Mode Field Effect Transistor

The DMN1006UCA6-7 is a high-performance, dual N-Channel enhancement mode field effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is engineered to deliver efficient power control and switching functionalities in a compact form factor, making it an ideal choice for a wide range of electronic applications.

Key Features

  • Low On-Resistance: The DMN1006UCA6-7 boasts a low on-resistance, which enhances its efficiency by minimizing conductive losses, thus making it suitable for high-efficiency power management systems.
  • Dual N-Channel MOSFET: This device integrates two N-Channel MOSFETs in a single package, providing design flexibility and saving space on the PCB.
  • High-Speed Switching: The transistor is capable of high-speed switching operations, which is crucial for applications requiring fast response times, such as power converters and motor controls.
  • Low Threshold Voltage: The low threshold voltage ensures that the MOSFET can be easily driven at lower gate voltages, making it compatible with low-voltage logic signals.

Applications

  • Power Management
  • DC-DC Converters
  • Battery Powered Devices
  • Load/Power Switching
  • Motor Control Circuits

Product Specifications

The DMN1006UCA6-7 is encapsulated in a compact SOT-26 package, which is optimized for minimal footprint and maximum thermal performance. The MOSFET operates over a wide temperature range, ensuring reliability under varying environmental conditions. With continuous drain currents and a low gate charge, this MOSFET is designed for applications demanding high efficiency and power density.

Quality and Reliability

Diodes Incorporated has a reputation for producing high-quality semiconductor products, and the DMN1006UCA6-7 is no exception. It is fabricated with advanced technology for enhanced performance stability and is subjected to rigorous testing to ensure its reliability and longevity in demanding applications.

Overall, the DMN1006UCA6-7 from Diodes Incorporated is a versatile and reliable component for designers looking to optimize their power management systems with a dual N-Channel MOSFET solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,813 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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