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Same model may have multiple batches, images only for reference.
PN4209
Same model may have multiple batches, images only for reference.

PN4209

Part No PN4209
Manufacturer Central Semiconductor Corp
Catalog Transistors (BJT) - Single
Description TRANS PNP 15V 0.2A TO92-3 / Bipolar (BJT) Transistor PNP 15 V 200 mA 850MHz 625 mW Through Hole TO-92-3
Datasheet
PN4209 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Central Semiconductor Corp
Package Bulk
Product Status Last Time Buy
Transistor Type PNP
Current - Collector (Ic) (Max) 200 mA
Voltage - Collector Emitter Breakdown (Max) 15 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 300mV
Power - Max 625 mW
Frequency - Transition 850MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
ECCN EAR99
HTSUS 8541.21.0075
Other Names 1514-PN4209
Standard Package 1
Win Source Part Number 1024874-PN4209
Ultra Librarian 3D Model Ultra Librarian PN4209 CAD Model

Description

The PN4209 from Central Semiconductor Corp is a high-quality PNP bipolar transistor that is ideal for a wide range of applications.

  • Maximum Power: 625mW
  • Maximum Collector-Emitter Breakdown Voltage: 15V
  • Maximum Collector Current: 200mA
  • Typical Vce Saturation: 600mV @ 5mA and 50mA
  • Maximum Collector Cutoff: 10nA
  • Minimum DC Current Gain: 50 @ 10mA and 300mV
  • Frequency Transition: 850MHz
  • Package/Case: TO-226-3, TO-92-3 (TO-226AA)
  • Device Supplier Package: TO-92-3
  • ECCN: EAR99

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