The HMC7441 is a three-stage GaAs pHEMT Power Amplifier which operates between 27.5 and 31 GHz.
The amplifier provides 23 dB of gain and +34 dBm of saturated output power at 25% PAE from a 6V supply. With an excellent output IP3 of +38 dBm, the HMC7441 is ideal for linear application such as Ka-band VSAT or high capacity point-to-point or point-to-multi-point radios demanding +34 dBm of efficient saturated output power. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via (1) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.