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BLF647A,112

Part No BLF647A,112
Manufacturer Ampleon USA Inc.
Catalog OEM Parts (A - B)
Description RF Power Transistor, LDMOS
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 1049341-BLF647A,112
Categories OEM Parts(A-B)
Manufacturer Ampleon USA Inc.
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BLF647A,112 CAD Model

Description

The BLF647A,112 is a 400 W LDMOS power transistor designed for broadband operation from 470 MHz to 860 MHz. Manufactured by Ampleon, it is commonly used in applications requiring high power and high efficiency in this frequency range.

Applications

  • Digital TV transmitters: Used in the final amplifier stage of DVB-T, DVB-T2, ATSC, and ISDB-T transmitters.
  • FM radio transmitters: Employed in high-power FM broadcast amplifiers.
  • Industrial heating and drying equipment: Used in RF generators for industrial applications.
  • Scientific and medical applications: Employed in RF power sources for MRI and particle accelerators.

Features

  • High efficiency: Designed for high drain efficiency, reducing power consumption and heat dissipation.
  • Broadband capability: Operates effectively across a wide frequency range from 470 MHz to 860 MHz.
  • High gain: Provides a high power gain, simplifying amplifier design.
  • Integrated ESD protection: Offers robust electrostatic discharge protection for increased reliability.
  • Excellent ruggedness: Designed to withstand high VSWR conditions, enhancing overall system reliability.

Benefits

  • Reduced operating costs: High efficiency minimizes power consumption, lowering operating expenses.
  • Simplified amplifier design: High gain simplifies the design of amplifier stages.
  • Increased system reliability: Rugged design and ESD protection ensure stable performance and longevity.
  • Improved signal quality: Low noise figure contributes to cleaner and more reliable signal transmission.
  • Compact design: Allows for smaller and more efficient amplifier solutions.

Additional Details

The BLF647A,112 uses advanced LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which offers excellent linearity and reliability. It typically operates at a supply voltage of 48-50V and can deliver a CW output power of 400W. The transistor is supplied in a ceramic package with a bolt-down flange for efficient heat dissipation. Proper thermal management is crucial to ensure the device's long-term reliability. Detailed specifications, including bias conditions, gain, and efficiency, can be found in the manufacturer's datasheet.

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