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Same model may have multiple batches, images only for reference.
AOW190A60C Real Image
Same model may have multiple batches, images only for reference.

AOW190A60C

Part No AOW190A60C
Manufacturer Alpha & Omega Semiconductor Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO262  /  N-Channel 600 V 20A (Tc) 208W (Tc) Through Hole TO-262
Datasheet
AOW190A60C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Alpha & Omega Semiconductor Inc.
Series aMOS5™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 4.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1935 pF @ 100 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number AOW190
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 785-AOW190A60C
Standard Package 1,000
Win Source Part Number 1208859-AOW190A60C
Ultra Librarian 3D Model Ultra Librarian AOW190A60C CAD Model

Description

The AOW190A60C from Alpha & Omega Semiconductor Inc. is an electronic component product from the aMOS5™ series, designed for use in high voltage power applications.

  • Product Type: MOSFET (Metal Oxide)
  • FET Type: N-channel
  • Drain-Source Voltage: 600V
  • Continuous Drain Current: 20A
  • Maximum Rds On: 190mOhm @ 7.6A, 10V
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Maximum Gate-Source Voltage: ±20V
  • RoHS: Compliant
  • REACH: Unaffected

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