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W651GG2JB-04

Part No W651GG2JB-04
Manufacturer Winbond Electronics
Catalog Electronic Wholesale
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 10+
Reference case BGA
Manufacturer Winbond Electronics
Manufacturer Homepage www.winbond.com
Win Source Part Number 757999-W651GG2JB-04
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian W651GG2JB-04 CAD Model

Description

The W651GG2JB-04 is a 256M x 4 (1Gb) DDR3 SDRAM manufactured by Winbond Electronics. It's a high-speed dynamic random-access memory designed for applications requiring large memory capacity, high bandwidth, and low power consumption. This component is commonly found in various electronic devices needing efficient data storage and retrieval.

Applications:

  • Desktop and laptop computers
  • Gaming consoles
  • Networking equipment (routers, switches)
  • Graphics cards
  • Embedded systems

Features:

  • Density: 1Gb (256M x 4)
  • Interface: DDR3 (Double Data Rate 3)
  • Speed Grade: -04 (Indicates the speed rating, typically corresponds to a specific clock frequency)
  • Operating Voltage: Typically 1.5V
  • Package: FBGA (Fine-Pitch Ball Grid Array)
  • Data Transfer Rate: High-speed data transfer capability
  • Low Power Consumption: Designed for energy-efficient operation

Benefits:

  • Increased System Performance: High bandwidth allows for faster data processing.
  • Greater Memory Capacity: Large memory size enables running memory-intensive applications.
  • Reduced Power Consumption: Energy-efficient design contributes to longer battery life in portable devices.
  • Improved System Stability: Reliable data storage and retrieval.
  • Compatibility: Designed to be compatible with various DDR3-supporting platforms.

Additional Details:

The W651GG2JB-04 DDR3 SDRAM module operates at a specific clock frequency determined by its speed grade (-04). The FBGA package provides a compact footprint and facilitates efficient heat dissipation. It conforms to JEDEC standards for DDR3 SDRAM. This memory component supports various DDR3 features, including write leveling, dynamic on-die termination (ODT), and ZQ calibration, which contribute to signal integrity and performance optimization. It's designed to handle a wide range of operating temperatures and voltages, ensuring stability and reliability in diverse environments. The device has an internal pipelined architecture for high-speed operation and supports burst lengths of 4 or 8. The W651GG2JB-04 also features an 8n-prefetch architecture to minimize latency. This chip is RoHS compliant.

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