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Same model may have multiple batches, images only for reference.
SIZ904DT-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIZ904DT-T1-GE3

Part No SIZ904DT-T1-GE3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET 2N-CH 30V 12A POWERPAIR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 12A, 16A
Rds On (Maximum) at Id, Vgs 24mOhm at 7.8A, 10V
Vgs(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 435pF at 15V
Power - Max 20W, 33W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 6-PowerPair
Supplier Device Package 6-PowerPair
Part Number Series SIZ904
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811133-SIZ904DT-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIZ904DT-T1-GE3 CAD Model

Description

The Vishay Siliconix SIZ904DT-T1-GE3 is a high-performance N-Channel FET that is designed to handle high voltage and high current loads.

  • FET Type: 2 N-Channel (Half Bridge) (Logic Level)
  • Drain to Source Voltage: 30V
  • Power Rating: 20W, 33W
  • Package: 6-PowerPair
  • Packaging: Reel
  • Rds On (Maximum) @ Id, Vgs: 24mOhm @ 7.8A, 10V
  • Gate Charge (Qg) (Maximum) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 435pF @ 15V
  • Current: 12A, 16A
  • Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
  • Manufacturer Pack Quantity: 3,000
  • MSL Level: 1 (Unlimited)

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Quantity Unit Price Ext. Price
75+ $0.7780 $58.3500
185+ $0.6384 $118.1040
285+ $0.6185 $176.2725
390+ $0.5985 $233.4150
500+ $0.5786 $289.3000
670+ $0.5187 $347.5290
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