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Same model may have multiple batches, images only for reference.
SISS30DN-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SISS30DN-T1-GE3

Part No SISS30DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 15.9A/54.7A PPAK / N-Channel 80 V 15.9A (Ta), 54.7A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Datasheet
SISS30DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 15.9A (Ta), 54.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 8.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1666 pF @ 10 V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
Base Product Number SISS30
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SISS30DN-T1-GE3DKR,SISS30DN-T1-GE3CT,SISS30DN-T1-GE3TR
Standard Package 3,000
Win Source Part Number 1093126-SISS30DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISS30DN-T1-GE3 CAD Model

Description

Win Source Part Number 1093126-SISS30DN-T1-GE3 is a N-Channel MOSFET (Metal Oxide) transistor. 1093126-SISS30DN-T1-GE3 is manufactured by .

  • Type: N-Channel MOSFET (Metal Oxide)
  • Series: TrenchFET Gen IV
  • Package: PowerPAK 1212-8S
  • Temperature Range: -55°C to 150°C
  • ECCN: EAR99

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110+ $0.9202 $101.2220
170+ $0.8914 $151.5380
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405+ $0.7476 $302.7780
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