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SIJ450DP-T1-GE3

Part No SIJ450DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL 45 V (D-S) MOSFET POWE / N-Channel 45 V 36A (Ta), 113A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 45 V
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 113A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 5920 pF @ 20 V
Power Dissipation (Max) 4.8W (Ta), 48W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SIJ450DP-T1-GE3CT,742-SIJ450DP-T1-GE3TR,742-SIJ450DP-T1-GE3DKR
Standard Package 3,000
Win Source Part Number 996797-SIJ450DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIJ450DP-T1-GE3 CAD Model

Description

The SIJ450DP-T1-GE3 is a N-Channel MOSFET transistor from the TrenchFET® Gen IV series of Vishay Siliconix. It has a drain-to-source voltage (Vdss) of 45V and a continuous drain current (Id) of 36A @ 25°C.

  • On-Resistance (Rds On): 1.9mOhm @ 10A and 10V
  • Gate Charge (Qg): 114 nC @ 10Vgs
  • Input Capacitance (Ciss): 5920 pF @ 20Vds
  • Designed for: Use in power conversion applications
  • Package: PowerPAK® SO-8
  • RoHS Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9233 $60.0145
155+ $0.7577 $117.4435
240+ $0.7340 $176.1600
330+ $0.7103 $234.3990
425+ $0.6867 $291.8475
565+ $0.6156 $347.8140
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Availability: 4,880 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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